Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts

Souad Benykrelef; Sedik Mansouri; Hicham Helal; Abdelaziz Rabehi; Abdelaziz Joti; Zineb Benamara

doi:10.18540/jcecvl9iss4pp15855-01e

Authors

Souad Benykrelef Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria
Sedik Mansouri Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria
Hicham Helal Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria
Abdelaziz Rabehi Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria Wireless and Wired Communication and Smart Systems Laboratory, Djelfa university of Algeria, Djelfa, 17000, Algeria
Abdelaziz Joti Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria
Zineb Benamara Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria

DOI:

https://doi.org/10.18540/jcecvl9iss4pp15855-01e

Keywords:

n-GaAs, nanowire, Silvaco-Atlas, Schottky diode, I–V characteristics

Abstract

This research aims to study the impact of metal work function ?_m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of 300-550K. This allows us to study and discuss the influence of temperature and the metal work function ?_m on the performance of our proposed device. The results show a great dependence between ?m and the electrical parameters. A decrease in current is observed with increasing ?_m, as well as an increase in barrier height with increasing ?m and a decrease with increasing temperature.