Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
DOI:
https://doi.org/10.18540/jcecvl9iss4pp15855-01ePalabras clave:
n-GaAs, nanowire, Silvaco-Atlas, Schottky diode, I–V characteristicsResumen
This research aims to study the impact of metal work function ?m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of 300-550K. This allows us to study and discuss the influence of temperature and the metal work function ?m on the performance of our proposed device. The results show a great dependence between ?m and the electrical parameters. A decrease in current is observed with increasing ?m, as well as an increase in barrier height with increasing ?m and a decrease with increasing temperature.
Descargas
Descargas
Publicado
Cómo citar
Número
Sección
Licencia
Derechos de autor 2023 The Journal of Engineering and Exact Sciences
![Creative Commons License](http://i.creativecommons.org/l/by/4.0/88x31.png)
Esta obra está bajo una licencia internacional Creative Commons Atribución 4.0.