Comparative study on perovskite solar cells using P_ZnO, Al_ZnO and In_ZnO as ETMs by SCAPS-1D

Abstract

This study uses the SCAPS 1D software to analyze solar cells with lead iodide perovskite (CH₃NH₃PbI₃) as the active material and three different types of ZnO doping: undoped (P_ZnO), aluminum-doped (Al_ZnO), and indium-doped (In_ZnO) as the electron transport layer (ETL). This study aims to investigate the effects of charge carrier density on the J-V characteristics and electrical properties (J_sc, V_oc, FF, Eff) of a solar cell structure made up of FTO/ETL/CH₃NH₃PbI₃/CuInSe₂/Au. Gold makes up the back contact, and tin oxide doped with fluorine (FTO) makes up the front contact. These two compounds have work roles are 5.47 eV and 4.4 eV respectively. Zinc oxide, both undoped and doped, makes up the electron transport layer, whereas methyl ammonium lead iodide makes up the absorber layer. Thin sheets, indium diselenide, and copper make up the hole transport layer. An optimal perovskite layer was obtained by decreasing the electron transportation layer's thickness (ETL) from 500 to 100 nm. For the In_ZnO ETL, this optimization was accomplished at 300K working temperature. Reduced ETL thickness was shown to result in higher efficiency (above 27%), as well as higher fill factor (above 87%). With a V_oc value of 1.180V, a FF value of 87.55%, and a J_sc value of 26.276mA/cm², the greatest efficiency performance of 27.15% was found. Using an absorber layer made of CH₃NH₃PbI₃ with a thickness of 800 nm and indium-doped oxide of zinc (In_ZnO) is the layer that transports electrons, this performance was achieved. The results are obtained at a constant irradiance level of 1000 W/m², under the AM1.5G spectrum.